REACTION ENTRE LES GERMANIURES DE TI ET H₂O₂POPOVA OI; BIRYUKOVA RS; SEMENOV KOBZAR AA et al.1975; UKRAIN. KHIM. ZH.; S.S.S.R.; DA. 1975; VOL. 41; NO 3; PP. 235-237; BIBL. 2 REF.Article

DIREKTBEOBACHTUNG DER AUSBILDUNG VON OXIDISCHEN DECKSCHICHTEN AUF MOSI₂/TIGE₂-MISCHKOERPERN. = OBSERVATION DIRECTE DE LA FORMATION D'UNE COUCHE D'OXYDES SUR LES MELANGES DE MOSI₂/TIGE₂SCHLICHTING J.1976; HIGH TEMPER.-HIGH PRESS.; G.B.; DA. 1976; VOL. 8; NO 1; PP. 99-102; BIBL. 4 REF.Article

Crystallographic data of new ternary CeFeSi-type RTiGe (R=Y, Gd-Tm) compoundsMOROZKIN, A. V; SEROPEGIN, Yu. D; LEONOV, A. V et al.Journal of alloys and compounds. 1998, Vol 267, Num 1-2, pp L14-L15, issn 0925-8388Article

CAPACITE CALORIFIQUE, ENTHALPIES ET ENTROPIES STANDARDS DES GERMANIURES TI₅GE₃ ET SC₅GE₃BELOKUROV EV; KALISHEVICH GI; GEL'D PV et al.1978; ZH. FIZ. KHIM.; SUN; DA. 1978; VOL. 52; NO 11; PP. 2970-2971; BIBL. 4 REF.Article

Initial growth of titanium germanosilicide on Ge/Si(111)YANAGAWA, T; NAGAI, H; ISHII, K et al.Applied surface science. 2001, Vol 175-76, pp 90-95, issn 0169-4332Conference Paper

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Infrared spectrum and compressibility of Ti₃GeC₂to 51 GPaMANOUN, Bouchaib; YANG, H; SAXENA, S. K et al.Journal of alloys and compounds. 2007, Vol 433, Num 1-2, pp 265-268, issn 0925-8388, 4 p.Article

Magnetic properties of hp13 type TiFe₆Ge₆ alloyNISHIHARA, R; AKIMITSU, M; HORI, T et al.Journal of magnetism and magnetic materials. 1999, Vol 196-97, pp 665-666, issn 0304-8853Conference Paper

Neutron diffraction and ⁵⁷Fe Mössbauer study of the HfFe₆Ge₆-type RFe₆Ge₆ compounds (R = Sc, Ti, Zr, Hf, Nb)MAZET, T; ISNARD, O; MALAMAN, B et al.Solid state communications. 2000, Vol 114, Num 2, pp 91-96, issn 0038-1098Article

CRYSTAL AND MAGNETIC STRUCTURE OF THE NIMN_1-TTI_TGE SYSTEMBAZELA W; SZYTULA A.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 1; PP. 45-52; ABS. RUS; BIBL. 12 REF.Article

Electronic structure of Gd₅(Si, Ge)₄SKOREK, G; DENISZCZYK, J; SZADE, J et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 30, pp 7273-7286, issn 0953-8984Article

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The electronic structure and chemical bonding of Ti₃GeC₂ZHIMEI SUN; YANCHUN ZHOU.Journal of material chemistry. 2000, Vol 10, Num 2, pp 343-345, issn 0959-9428Article

Magnetic properties and magnetic structure of HoTiGe and ErTiGePROKES, K; TEGUS, O; BRÜCK, E et al.Journal of alloys and compounds. 2002, Vol 335, Num 1-2, pp 62-69, issn 0925-8388Article

Solid phase reaction of Ti with Si-Ge layers prepared by Ge-implantationUMAPATHI, B; DAS, S; LAHIRI, S. K et al.Journal of electronic materials. 2001, Vol 30, Num 1, pp 17-22, issn 0361-5235Article

Crystal and magnetic structure of new ternary uranium intermetallics : U₃TiX₅ (X = Ge, Sn)BOULET, P; GROSS, G. M; ANDRE, G et al.Journal of solid state chemistry (Print). 1999, Vol 144, Num 2, pp 311-317, issn 0022-4596Article

Structure of amorphous metal-metalloid alloysWILLIAMS, B. T; GURMAN, S. J; AMISS, J. C et al.Physica. B, Condensed matter. 1995, Vol 208-09, pp 367-368, issn 0921-4526Conference Paper

Crystal structure and the magnetic properties of CeTiGe3MANFRINETTI, P; DHAR, S. K; KULKARNI, R et al.Solid state communications. 2005, Vol 135, Num 7, pp 444-448, issn 0038-1098, 5 p.Article

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